✦ LIBER ✦

Numerical modeling of silicon quantum dots

✍ Scribed by S. Udipi; D. Vasileska; D.K. Ferry

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 248 KB
Volume: 20
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0087

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✦ Synopsis

We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to 3D for the continuity equation. To reduce the computation time and storage requirements, an adaptive non-uniform mesh was adopted.

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