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Models of quantum dots

✍ Scribed by P.A. Maksym; L.D. Hallam; J. Weis

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
395 KB
Volume
212
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Numerical modeling of silicon quantum do
Numerical modeling of silicon quantum dots
✍ S. Udipi; D. Vasileska; D.K. Ferry πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 248 KB

We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to

3D modeling of silicon quantum dots
3D modeling of silicon quantum dots
✍ S.N. MiličiΔ‡; F. Badrieh; D. Vasileska; A. Gunther; S.M. Goodnick πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 701 KB

We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is meas

Three dimensional semiconductor quantum-
Three dimensional semiconductor quantum-dot model
πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 132 KB

## Three dimensional semiconductor quantum-dot model The inestimable value of modelling is not lost on the scientific community. Here a team of researchers at Lehigh and Princeton University model semiconductor quantum dots, in order to establish the temperature that these devices can tolerate. A