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3D modeling of silicon quantum dots

✍ Scribed by S.N. Miličić; F. Badrieh; D. Vasileska; A. Gunther; S.M. Goodnick

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
701 KB
Volume
27
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present results of full 3D self-consistent simulations of the energy spectrum in siliconbased symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used.

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