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3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects

✍ Scribed by S.N. Miličić; R. Akis; D. Vasileska; A. Gunther; S.M. Goodnick


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
565 KB
Volume
28
Category
Article
ISSN
0749-6036

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✦ Synopsis


We present simulation results obtained using a 3D coupled Schrödinger-Poisson equation solver. Of special interest in this work were the effects that discrete impurities have on the energy spectra in the dot and how these effects can be used to better explain conductance peaks observed in experimental measurements. We also explored the behavior of the energy level separations in the closed quantum dot system, observing indications of the onset of chaos.