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Electronic structure model for n- and p-type silicon quantum dots

✍ Scribed by T.-N. Fang; P. Paul Ruden

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
164 KB
Volume
22
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present effective mass, single-particle calculations of the electronic structure of nand p-type silicon quantum dots. The structures investigated approximate silicon quantum dots fabricated on 001 -oriented SIMOX wafers. The effects of possible built-in strain are investigated in the framework of deformation potential induced splitting of the six degenerate conduction band valleys and the splitting of the degeneracy at the top of the bulk valence band. We present the energy levels and their degeneracies as functions of the dimensions of simple tetragonal model quantum dots. Our results are relevant for silicon quantum dots that are sufficiently small such as to lead to a predominance of the confinement energy over the Coulomb energy.

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## Abstract Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐