We present effective mass, single-particle calculations of the electronic structure of nand p-type silicon quantum dots. The structures investigated approximate silicon quantum dots fabricated on 001 -oriented SIMOX wafers. The effects of possible built-in strain are investigated in the framework of
โฆ LIBER โฆ
A Model for n-type and p-type Gallium Sulphide
โ Scribed by Lieth, R. M. A. ;Van Der Maesen, F.
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 487 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0031-8965
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A set of p-type Czochralski (Cz) silicon materials grown by Shin-Etsu Handotai was used for a comprehensive investigation, including carrier lifetime measurements and fabrication of high-eciency solar cells at Fraunhofer ISE. The set of dierent materials consists of gallium and boron doped wafers gr