𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Numerical modeling of SiC–CVD in a horizontal hot-wall reactor

✍ Scribed by Shin-ichi Nishizawa; Michel Pons


Book ID
108207531
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
118 KB
Volume
83
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Horizontal hot wall reactor design for e
✍ A. Veneroni; F. Omarini; M. Masi; S. Leone; M. Mauceri; G. Pistone; G. Abbondanz 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 200 KB 👁 1 views

## Abstract The model adopted for the simulation of a new industrial size type of horizontal cold wall reactor for epitaxial silicon carbide deposition is reviewed. The attention is focalized on the chemical mechanism adopted and on the comparison with some growth rate data and temperature profiles

Growth of SiC by “Hot-Wall” CVD and HTCV
✍ O. Kordina; C. Hallin; A. Henry; J. P. Bergman; I. Ivanov; A. Ellison; N. T. Son 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 361 KB 👁 1 views