High growth rate process in a SiC horizontal CVD reactor using HCl
β Scribed by F. La Via; G. Galvagno; F. Roccaforte; F. Giannazzo; S. Di Franco; A. Ruggiero; R. Reitano; L. Calcagno; G. Foti; M. Mauceri; S. Leone; G. Pistone; F. Portuese; G. Abbondanza; G. Abbagnale; A. Veneroni; F. Omarini; L. Zamolo; M. Masi; G.L. Valente; D. Crippa
- Book ID
- 104050433
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 133 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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A silicon epitaxial growth process in a trichlorosilane-hydrogen system using a single-wafer highspeed substrate rotation reactor was studied by means of experiments and numerical calculations taking into account the transport phenomena and surface chemical reactions. Hydrogen chloride gas produced
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