## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified ShichmanβHodges model, in which the generation current,
Numerical modeling of power mosfets
β Scribed by D.H. Navon; C.T. Wang
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 232 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0038-1101
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