Behaviour of power MOSFETs at cryogenic temperatures

✍ Scribed by R. Karunanithi; A.K. Raychaudhuri; Z. Szücs; G.V. Shivashankar

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 404 KB
• Volume: 31
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/0011-2275(91)90129-k

✦ Synopsis

In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2-300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to =30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freezeout in the n-region on the substrate, which forms a drain.