In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the te
Analytical modeling of MOSFET conductance parameters at cryogenic temperatures
β Scribed by A. Srivastava
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 388 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
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