𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling of saturation transconductance for short-channel MOSFETs

✍ Scribed by H. Wong; K.F. Man; M.C. Poon


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
336 KB
Volume
39
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


A self-consistent model for short-channe
✍ M. El Banna; M. El Nokali πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 579 KB

A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output