Analytic modelling for currentβvoltage c
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Ching-Sung Lee; Wei-Chou Hsu
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Article
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2001
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Elsevier Science
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English
β 265 KB
A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have