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Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors

✍ Scribed by Jeong, J.; Kim, J.; Lee, G.J.; Choi, B.-D.

Book ID: 120223998
Publisher: The Institution of Electrical Engineers
Year: 2011
Tongue: English
Weight: 212 KB
Volume: 47
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2011.2024

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