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Numerical analysis of breakdown voltage using quasi three dimensional device simulation

✍ Scribed by Yabuta, A.; Hwang, C.G.; Suzumura, M.; Dutton, R.W.

Book ID
114536553
Publisher
IEEE
Year
1990
Tongue
English
Weight
887 KB
Volume
37
Category
Article
ISSN
0018-9383

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The a¨alanche channel breakdown in HFETs is studied by means of a quasi-two-dimensional simulation. The influence of the gate recess parameters is analyzed for different structures, considering both the breakdown ¨oltage and the microwa¨e performance. Accurate predictions can be obtained, in particu