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Analysis of channel breakdown phenomenon in HFETs by a quasi-two-dimensional simulation

✍ Scribed by Y. Butel; J. C. De Jaeger; J. Hedoire

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
270 KB
Volume
18
Category
Article
ISSN
0895-2477

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✦ Synopsis

The a¨alanche channel breakdown in HFETs is studied by means of a quasi-two-dimensional simulation. The influence of the gate recess parameters is analyzed for different structures, considering both the breakdown ¨oltage and the microwa¨e performance. Accurate predictions can be obtained, in particular, the gates recess offset influence which constitutes the most important parameter.

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