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Analysis of sit I–V characteristics by two-dimensional simulation

✍ Scribed by T. Yamamoto; K. Matsumoto; A. Yusa

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
948 KB
Volume
30
Category
Article
ISSN
0038-1101

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The a¨alanche channel breakdown in HFETs is studied by means of a quasi-two-dimensional simulation. The influence of the gate recess parameters is analyzed for different structures, considering both the breakdown ¨oltage and the microwa¨e performance. Accurate predictions can be obtained, in particu