๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Use of Fermi statistics in two-dimensional numerical simulation of heterojunction devices

โœ Scribed by Li, Z -M; McAlister, S P; Hurd, C M


Book ID
120605503
Publisher
Institute of Physics
Year
1990
Tongue
English
Weight
579 KB
Volume
5
Category
Article
ISSN
0268-1242

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Study of interdigitated back contact sil
โœ D. Diouf; J.P. Kleider; T. Desrues; P.-J. Ribeyron ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 538 KB

Silicon heterojunctions (SHJ) using thin layers of hydrogenated amorphous silicon (a-Si:H) deposited at low temperature on a crystalline silicon (c-Si) substrate are good candidates for high efficiency solar cells. In spite of achieving more than 22% efficiencies, the standard double HJ solar cells