Nucleation and growth of aluminium oxide on silicon in the CVD process
โ Scribed by Sung Woo Choi; Chul Kim; Jae Gon Kim; John S. Chun
- Publisher
- Springer
- Year
- 1987
- Tongue
- English
- Weight
- 529 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0022-2461
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๐ SIMILAR VOLUMES
The oxidation of three aluminium-silicon alloys has been studied as a function of temperature. At temperatures below 473 K a thin passivating oxide รlm is formed. At higher temperatures the segregation of the trace element magnesium to the surface is observed where it dominates the subsequent oxidat
## Abstract Diamond epitaxy is of great interest for electronic applications. Most of the time, heteroepitaxial diamond films have been obtained using the Bias Enhanced Nucleation (BEN) step. To investigate the transition between the first CVD plasma exposure and the BEN steps, we studied the resid