Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on silicon
✍ Scribed by Saada, S. ;Arnault, J. C. ;Tranchant, N. ;Bonnauron, M. ;Bergonzo, P.
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 438 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Diamond epitaxy is of great interest for electronic applications. Most of the time, heteroepitaxial diamond films have been obtained using the Bias Enhanced Nucleation (BEN) step. To investigate the transition between the first CVD plasma exposure and the BEN steps, we studied the residence time distribution (RTD) to monitor the methane concentration in the gas mixture. We showed that the stabilisation time of the methane concentration is not negligible when compared to the biasing duration currently used to obtain high nucleation density and induces effects on the current variation during the first stages of nucleation. We proposed a modelisation of the CVD reactor from experimental data to optimise and reduce this stabilisation time. Then, we showed that the nucleation phenomena are strongly dependent of the used protocol. To conclude, we propose a new approach for an improved control of the Bias Enhanced Nucleation parameters towards a greater reproducibility. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)