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Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells

✍ Scribed by Nido, M.; Alexander, M. G. W.; Rühle, W. W.; Schweizer, T.; Köhler, K.


Book ID
127075329
Publisher
American Institute of Physics
Year
1990
Tongue
English
Weight
554 KB
Volume
56
Category
Article
ISSN
0003-6951

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We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect