Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates
✍ Scribed by J.M Feng; M Tateuchi; K Asai; M Uwani; P.O Vaccaro; K Fujita; T Ohachi
- Book ID
- 108361681
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 190 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0026-2692
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📜 SIMILAR VOLUMES
The effect of the orientation on intersubband tunneling process in Al Ga AsrGaAs asymmetric double quantum 0.35 0.65 Ž . Ž . Ž . Ž . wells ADQWs grown on GaAs n11 A n F 4 substrates was studied by cw photoluminescence PL , time-resolved Ž . Ž . photoluminescence TRPL at low temperatures and transmis
E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ