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Nonlinear and Intermodulation Characteristics of Millimeter-Wave IMPATT Amplifiers

โœ Scribed by Kuno, H.J.; English, D.L.

Book ID
114656633
Publisher
IEEE
Year
1976
Tongue
English
Weight
717 KB
Volume
24
Category
Article
ISSN
0018-9480

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๐Ÿ“œ SIMILAR VOLUMES

Analysis of SiC IMPATT device in millime
Analysis of SiC IMPATT device in millimeter-wave frequencies
โœ C. C. Meng; G. R. Liao ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

SiC IMPATT deยจices haยจe an efficiency and power adยจantage oยจer Si and GaAs IMPATT deยจices at millimeter-waยจe frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type ( large-signal model. The simulation

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Analysis of millimeter-wave GaN IMPATT oscillator at elevated temperature
โœ C. C. Meng; G. R. Liao; J. W. Chen ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 100 KB ๐Ÿ‘ 1 views

w ลฝ .x structed time delay Fig. 4 b obtained by means of the Hilbert transform from the measured reflectivity. Similar results are obtained for all of the rest of the sample grating resonances.

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โœ C. C. Meng; G. R. Liao ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 107 KB ๐Ÿ‘ 1 views

GaInP material has high breakdown electric fields, and thus is suitable for aยจalanche transit-time deยจice application. Millimeter-( ) waยจe GaInP IMPATT deยจices at operating temperature 500 K are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT deยจice has a