𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of SiC IMPATT device in millimeter-wave frequencies

✍ Scribed by C. C. Meng; G. R. Liao

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
104 KB
Volume
18
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

SiC IMPATT de¨ices ha¨e an efficiency and power ad¨antage o¨er Si and GaAs IMPATT de¨ices at millimeter-wa¨e frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type ( large-signal model. The simulation demonstrates that the efficiency and ) ( ) q dc power density at operating temperature 800 K for SiC p n single-( 2 ) drift flat-profile IMPATT structures is 12.4% 6.7 MWrcm , 15% ( 2 ) ( 2 ) 4.5 MWrcm , and 15.8% 3.3 MWrcm for frequencies of 200, 100, and 50 GHz, respecti¨ely.

📜 SIMILAR VOLUMES

Performance of millimeter-wave GaInP IMP
Performance of millimeter-wave GaInP IMPATT device at elevated temperature
✍ C. C. Meng; G. R. Liao 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB 👁 1 views

GaInP material has high breakdown electric fields, and thus is suitable for a¨alanche transit-time de¨ice application. Millimeter-( ) wa¨e GaInP IMPATT de¨ices at operating temperature 500 K are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT de¨ice has a

Analysis of millimeter-wave GaN IMPATT o
Analysis of millimeter-wave GaN IMPATT oscillator at elevated temperature
✍ C. C. Meng; G. R. Liao; J. W. Chen 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 100 KB 👁 1 views

w Ž .x structed time delay Fig. 4 b obtained by means of the Hilbert transform from the measured reflectivity. Similar results are obtained for all of the rest of the sample grating resonances.