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Non-volatile memory based on silicon nanoclusters

✍ Scribed by Yu. N. Novikov


Book ID
111444406
Publisher
Springer
Year
2009
Tongue
English
Weight
206 KB
Volume
43
Category
Article
ISSN
1063-7826

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Silicon-on-insulator non-volatile field-
✍ J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 104 KB

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were