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On the saturation mechanism in the Ge nanocrystals-based non-volatile memory

✍ Scribed by M. Kanoun; C. Busseret; T. Baron; A. Souifi


Book ID
108269530
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
198 KB
Volume
50
Category
Article
ISSN
0038-1101

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Non-volatile resistive memory devices based on a polyfluorene layer sandwiched between two electrodes were studied. The working mechanism was ascribed to the formation of metallic filaments. We characterized the switching probability of multiple devices and the consistency of the switching capabilit