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Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices

โœ Scribed by Tae-Wook Kim; Seung-Hwan Oh; Joonmyoung Lee; Hyejung Choi; Gunuk Wang; Jubong Park; Dong-Yu Kim; Hyunsang Hwang; Takhee Lee


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
525 KB
Volume
11
Category
Article
ISSN
1566-1199

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โœ Bao Lei; Wei Lek Kwan; Yue Shao; Yang Yang ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 775 KB

Non-volatile resistive memory devices based on a polyfluorene layer sandwiched between two electrodes were studied. The working mechanism was ascribed to the formation of metallic filaments. We characterized the switching probability of multiple devices and the consistency of the switching capabilit