Statistical characterization of the memo
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Bao Lei; Wei Lek Kwan; Yue Shao; Yang Yang
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Article
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2009
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Elsevier Science
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English
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Non-volatile resistive memory devices based on a polyfluorene layer sandwiched between two electrodes were studied. The working mechanism was ascribed to the formation of metallic filaments. We characterized the switching probability of multiple devices and the consistency of the switching capabilit