Non-destructive characterization of nitr
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M. Fried; T. Lohner; J.M.M. De Nijs; A. Van Silfhout; L.J. Hanekamp; N.Q. Khanh;
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Article
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1989
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Elsevier Science
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English
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## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N รท ions at a dose of 7.5ร1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed