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Non-destructive characterization of dual epilayer silicon structures

โœ Scribed by J.A.A. Engelbrecht; M. Walden; A. Dupnock


Book ID
107768302
Publisher
Elsevier Science
Year
1993
Weight
468 KB
Volume
34
Category
Article
ISSN
0020-0891

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Non-destructive characterization of nitr
โœ M. Fried; T. Lohner; J.M.M. De Nijs; A. Van Silfhout; L.J. Hanekamp; N.Q. Khanh; ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 465 KB

## 1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N รท ions at a dose of 7.5ร—1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed