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Nomograph technique for doping determination in germanium and silicon crystal growing

✍ Scribed by N. Hemmat; A.L. MacDonald


Publisher
Elsevier Science
Year
1961
Tongue
English
Weight
374 KB
Volume
3
Category
Article
ISSN
0038-1101

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The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si x Ge 1Γ€x ) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confin