Light confinement in 3D silicon doped with germanium (n-SixGe1−x) and silicon-on-insulator (SOI) photonic crystal structures
✍ Scribed by F. Ouerghi; F. AbdelMalek; S. Haxha; M. Mejatty; H. Bouchriha; V. Haxha
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 887 KB
- Volume
- 265
- Category
- Article
- ISSN
- 0030-4018
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✦ Synopsis
The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si x Ge 1Àx ) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confinement of the light and the band gap size has been presented. A 3D full vectorial plane wave was developed and employed to investigate design parameters of the 3D PC structure and to calculate dispersion relation for guided modes. Calculations of band structures for the triangular lattices of dielectric cylinders in air for quasi-3D PC structures have been performed.