✦ LIBER ✦

Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]

✍ Scribed by Guofu Niu; Shiming Zhang; Cressler, J.D.; Joseph, A.J.; Fairbanks, J.S.; Larson, L.E.; Webster, C.S.; Ansley, W.E.; Harame, D.L.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Noise in SiGe HBT RF Technology: Physics

✍ Niu, G. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 596 KB

Noise parameter optimization of UHV/CVD

✍ Guofu Niu; Ansley, W.E.; Shiming Zhang; Cressler, J.D.; Webster, C.S.; Groves, R 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 348 KB

Novel Ge-profile design for high-speed S

✍ Patri, V.S.; Jagadesh Kumar, M. 📂 Article 📅 1999 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 404 KB

Investigation of compact models for RF n

✍ Jungemann, C.; Neinhus, B.; Meinerzhagen, B.; Dutton, R.W. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 276 KB

Linearity and power characteristics of S

✍ Kun-Ming Chen; An-Sam Peng; Guo-Wei Huang; Han-Yu Chen; Sheng-Yi Huang; Chun-Yen 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 502 KB

Transistor design and application consid

✍ Freeman, G.; Jagannathan, B.; Shwu-Jen Jeng; Jae-Sung Rieh; Stricker, A.D.; Ahlg 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 867 KB