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Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN

✍ Scribed by M. Katsikini; E.C. Paloura; J. Bollmann; E. Holub-Krappe; W.T. Masselink

Book ID
108437300
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
144 KB
Volume
101-103
Category
Article
ISSN
0368-2048

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## Abstract Formation of low resistance and thermally stable ohmic contacts to GaN is of considerable importance for device applications. Several metallization schemes for ohmic contacts to n‐GaN with low contact resistance have been proposed and investigated by different techniques. We investigate