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Raman and X-ray absorption near-edge structure characterization of GaN implanted with O, Ar, Xe, Te and Au

✍ Scribed by M. Katsikini; J. Arvanitidis; E.C. Paloura; S. Ves; E. Wendler; W. Wesch

Book ID: 108234091
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 195 KB
Volume: 29
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2006.10.013

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