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Nitrogen ion implantation of silicon in dense plasma focus

✍ Scribed by Mehboob Sadiq; S. Ahmad; M. Shafiq; M. Zakaullah


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
770 KB
Volume
252
Category
Article
ISSN
0168-583X

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Surface wettabiliy of nitrogen plasma-im
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Silicon wafers were implanted with nitrogen by plasma immersion ion implantation (PIII) to alter the surface hydrophilic properties and wettability. Our X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and contact angle measurements indicate that the Si-N bonds