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The application of nitrogen ion implantation in silicon technology

✍ Scribed by W.J.M.J. Josquin

Publisher
Elsevier Science
Year
1983
Weight
605 KB
Volume
209-210
Category
Article
ISSN
0167-5087

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Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of