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Nitrogen effect on oxygen precipitation in Czochralski silicon

✍ Scribed by Shimura, F.; Hockett, R. S.

Book ID
121800652
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
487 KB
Volume
48
Category
Article
ISSN
0003-6951

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Effect of ramping anneals under inert or
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## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit