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Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

โœ Scribed by Lin, Y.C.; Chang, S.J.; Su, Y.K.; Tsai, T.Y.; Chang, C.S.; Shei, S.C.; Hsu, S.J.; Liu, C.H.; Liaw, U.H.; Chen, S.C.; Huang, B.R.

Book ID
115488560
Publisher
IEEE
Year
2002
Tongue
English
Weight
234 KB
Volume
14
Category
Article
ISSN
1041-1135

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Electrical characteristics of In/ITO p-t
Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes
โœ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 ร‚ 10 -3 O cm 2 upon annealing at 650