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Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts

✍ Scribed by Y. Yao; C. Jin; Z. Dong; Z. Sun; S.M. Huang

Book ID: 108114444
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 154 KB
Volume: 28
Category: Article
ISSN: 0141-9382
DOI: 10.1016/j.displa.2007.04.012

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## Abstract Wafer‐scale UV nanoimprint and dry etching processes were used to fabricate photonic crystal patterns on an indium tin oxide (ITO) top electrode of GaN‐based green light‐emitting diodes (LEDs). Photonic crystal patterns with pitches ranging from 600 to 900 nm were transferred to the ent