✦ LIBER ✦

Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology

✍ Scribed by C. Gerardi; M. Melanotte; B. Crivelli; R. Zonca; M. Alessandri

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 524 KB
Volume: 31
Category: Article
ISSN: 0968-4328
DOI: 10.1016/s0968-4328(99)00096-7

No coin nor oath required. For personal study only.

✦ Synopsis

Nitridation treatments are very important in CMOS technology because of their capability of improving the gate and tunnel oxide reliability. In this work we report on N2O and NO annealing of pre-oxidised samples showing physical and electrical characteristics of the thin oxides. The difference between the physical behaviours of N2O and NO oxides is evidenced and related to their different electrical properties.

📜 SIMILAR VOLUMES

Growth of lanthanum oxide films for appl

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

✍ P. Pisecny; K. Husekova; K. Frohlich; L. Harmatha; J. Soltys; D. Machajdik; J.P. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 274 KB

Impact of gate-oxide tunneling on mixed-

Impact of gate-oxide tunneling on mixed-signal design and simulation of a nano-CMOS VCO

✍ Elias Kougianos; Saraju P. Mohanty 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 518 KB

Independent interface and bulk film cont

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

✍ G Lucovsky; H Niimi; Y Wu; H Yang 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 667 KB

Polarity dependent generation of gate-si

Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate oxides

✍ M. Florian Beug; Rüdiger Ferretti; Karl R. Hofmann 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 385 KB

Electrical characterization and simulati

Electrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectrics

✍ Z.J. Ma; P.T. Lai; Y.C. Cheng 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 703 KB

Boron out-diffusion mechanism in oxide a

Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties

✍ B. Pelletier; M. Juhel; C. Trouiller; D. Beucher; J.L. Autran; P. Morin 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 569 KB

The interactions occurring between the pMOSFET sidewall spacers and the shallow junctions underneath can be detrimental for the transistor performance. In fact, a significant part of the p-type LDD boron may out-diffuse into the spacer oxide layer during the doping activation annealing, resulting in