NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena

✍ Scribed by K.-C. Min; M. Kim; Y.-H. You; S.S. Lee; Y.K. Lee; T.-M. Chung; C.G. Kim; J.-H. Hwang; K.-S. An; N.-S. Lee; Y. Kim

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 791 KB
• Volume: 201
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.04.120

✦ Synopsis

We have synthesized the volatile, liquid, nickel precursor Ni(dmamb) 2 , nickel bis(1-dimethylamino-2-methyl-2-butanolate), Ni[OC(CH 3 ) (C 2 H 5 )CH 2 N(CH 3 ) 2 ] 2 , and employed it in the MOCVD of nickel oxide (NiO). A stainless steel, cold-wall, low-pressure reactor was employed to grow the NiO films on Si and Pt/SiO 2 /Si substrates. In addition, the resistance switching property of the Pt/NiO/Pt capacitor structure was investigated. The substrate temperature was varied in the range 230-410 °C. The films deposited were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and I-V measurements. They were polycrystalline showing dominantly the NiO (111) peak in their X-ray diffraction patterns. The films were found to be almost stoichiometric with the Ni:O ratio of 1.1:0.9 and no appreciable amount of carbon incorporation was detected by XPS. The I-V measurements revealed an interesting switching property of the NiO films showing low and high resistance states thereby suggesting their application as ReRAM devices.