A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nick
β¦ LIBER β¦
Nickel-silicide process for ultra-thin-body SOI-MOSFETs
β Scribed by M. Schmidt; T. Mollenhauer; H.D.B. Gottlob; T. Wahlbrink; J.K. Efavi; L. Ottaviano; S. Cristoloveanu; M.C. Lemme; H. Kurz
- Book ID
- 108207509
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 278 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0167-9317
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