๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Nickel and cobalt silicide formation by broad and focused ion beam implantation

โœ Scribed by T. Aoki; K. Gamo; S. Namba; T. Shiokawa; K. Toyoda; H. Okabayashi; H. Mori; H. Fujita

Book ID
113280182
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
894 KB
Volume
39
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

RBS and channeling analysis of cobalt di
RBS and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation
โœ J Teichert; M Voelskow; L Bischoff; S Hausmann ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 564 KB

Cobalt disilicide layers were formed by ion beam synthesis using 35 keV Co + focused ion beam (FIB) implantation into silicon. A strong influence of the pixel dwell-time on the layer formation was found. Only for short pixel dwell-times (about 1 ms) closed layers with sufficient quality for device a