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New method of determination of the flat-band voltage in SOI MOS structures

✍ Scribed by Krzysztof Iniewski; Andrzej Jakubowski


Book ID
107856779
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
372 KB
Volume
29
Category
Article
ISSN
0038-1101

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A sine-voltage technique for measurements of recombination lifetime in metal oxide semiconductor (MOS) structures is proposed. When a fast sine-voltage sweep ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electron-hole generation starts in the space-c