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Accurate determination of flat band voltage in advanced MOS structure

✍ Scribed by Charles Leroux; Gérard Ghibaudo; Gilles Reimbold

Book ID
108210688
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
166 KB
Volume
47
Category
Article
ISSN
0026-2714

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✍ P. Peykov; T. Diaz; M. Aceves 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 100 KB

A sine-voltage technique for measurements of recombination lifetime in metal oxide semiconductor (MOS) structures is proposed. When a fast sine-voltage sweep ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electron-hole generation starts in the space-c