## Abstract An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, bandβ1βpower classβ2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and powerβadded efficiency (PAE) of 48% at a frequenc
New InGaP power amplifier modules
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 346 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0961-1290
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π SIMILAR VOLUMES
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec
has opened a design centre in the
## Abstract A novel programmable MMIC predistortion circuit as an input stage of a broadband power amplifier (PA) is proposed and designed. By varying its reference voltage, one can adjust the magnitude of gain expansion and negative phase deviation to compensate the typical nonlinearities of the f
In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the conc