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New InGaP power amplifier modules


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
346 KB
Volume
14
Category
Article
ISSN
0961-1290

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πŸ“œ SIMILAR VOLUMES


InGaP/GaAs HBT power amplifier with CMRC
✍ C. K. Poek; B. P. Yan; E. S. Yang πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 137 KB

## Abstract An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically, band‐1‐power class‐2 application. The HBT power amplifier demonstrates maximum output power P~out~ of 29.4 dBm and power‐added efficiency (PAE) of 48% at a frequenc

InGaP/GaAs heterojunction bipolar transi
✍ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec

A novel programmable predistortion circu
✍ Huai Gao; Rong Wang; Haitao Zhang; Hongxi Xue; G. P. Li πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 339 KB

## Abstract A novel programmable MMIC predistortion circuit as an input stage of a broadband power amplifier (PA) is proposed and designed. By varying its reference voltage, one can adjust the magnitude of gain expansion and negative phase deviation to compensate the typical nonlinearities of the f

Broadband high-efficiency monolithic InG
✍ Herbert JΓ€ger; Andrei Grebennikov; Eugene Heaney; Robert Weigel πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 529 KB

In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the conc