New experimental observations on the electrical characteristics of the Al/SRO/Si diode, and annealing effects

✍ Scribed by M. Aceves; C. Falcony; J.A. Reynoso; W. Calleja; R. Pérez

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 436 KB
• Volume: 2
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(99)00010-4

✦ Synopsis

The electrical characteristics of the Al/Silicon Rich Oxide (SRO)/Si device are studied as a function of bulk concentration of N and P type silicon wafers, and dierent contents of excess silicon and thickness of the SRO ®lm. It is experimentally observed that depending on the type and impurity concentration of the silicon substrate, the I± V relationship can have a high current regime for positive and negative polarities, and also that the current can saturate for the polarity that produces Si surface inversion. These experimental observations are explained as a result of the electron hole pair generation in the depleted region, and also due to further increase of the width of this region. It is shown that the onset electrical ®eld (E on ) is lightly in¯uenced by annealing at high temperature. This variation is more evident as the excess silicon increases, and this eect can be associated to the structural change that high temperature annealing produces on the SRO. A simple method to estimate the excess silicon is also proposed.