The electrical characteristics of the Al/Silicon Rich Oxide (SRO)/Si device are studied as a function of bulk concentration of N and P type silicon wafers, and dierent contents of excess silicon and thickness of the SRO ®lm. It is experimentally observed that depending on the type and impurity conce
Reversible and irreversible effects on the electrical characteristics of new high-speed aSi and aSiC switches
✍ Scribed by E.I. Dimitriadis; N. Georgoulas; A. Thanailakis
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 498 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0026-2692
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