Neural networks for large- and small-signal modeling of MESFET/HEMT transistors
β Scribed by Lazaro, M.; Santamaria, I.; Pantaleon, C.
- Book ID
- 114545082
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 167 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9456
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
This article presents a detailed procedure to learn a nonlinear model and its derivatives to as many orders as desired with multilayer perceptron (MLP) neural networks. A modular neural network modeling a nonlinear function and its derivatives is introduced. The method has been used for the extracti
Artificial neural networks (ANNs) are presented for the technologyindependent modeling of active devices in MMICs. ANNs trained with S-parameter and DC measurements over the entire bias and frequency operational band are used for the small-signal bias-dependent modeling of a low-noise GaAs HEMT devi
## Abstract A nonlinear lumpedβelement model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__βband hybrid amplifier. Excellent agreement between measurements and simulated p