𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Neural networks for large- and small-signal modeling of MESFET/HEMT transistors

✍ Scribed by Lazaro, M.; Santamaria, I.; Pantaleon, C.


Book ID
114545082
Publisher
IEEE
Year
2001
Tongue
English
Weight
167 KB
Volume
50
Category
Article
ISSN
0018-9456

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


New small-signal model for HEMTs and MES
✍ Jian-Guo Ma; Ting Huang Lee; Kiat Seng Yeo; Manh Anh Do πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 152 KB πŸ‘ 1 views
Modeling power and intermodulation behav
✍ F. Giannini; G. Leuzzi; G. Orengo; P. Colantonio πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 260 KB

This article presents a detailed procedure to learn a nonlinear model and its derivatives to as many orders as desired with multilayer perceptron (MLP) neural networks. A modular neural network modeling a nonlinear function and its derivatives is introduced. The method has been used for the extracti

Small-signal and large-signal modeling o
✍ F. Giannini; G. Leuzzi; G. Orengo; M. Albertini πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 298 KB

Artificial neural networks (ANNs) are presented for the technologyindependent modeling of active devices in MMICs. ANNs trained with S-parameter and DC measurements over the entire bias and frequency operational band are used for the small-signal bias-dependent modeling of a low-noise GaAs HEMT devi

A new instantaneous model of MESFET and
✍ Maurizio Cicolani; Alberto Di Martino; Silvio D'Innocenzo; Stefano Pisa; Pasqual πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 192 KB

## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p