Small-signal and large-signal modeling of active devices using CAD-optimized neural networks

✍ Scribed by F. Giannini; G. Leuzzi; G. Orengo; M. Albertini

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 298 KB
• Volume: 12
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/mmce.10007

✦ Synopsis

Artificial neural networks (ANNs) are presented for the technologyindependent modeling of active devices in MMICs. ANNs trained with S-parameter and DC measurements over the entire bias and frequency operational band are used for the small-signal bias-dependent modeling of a low-noise GaAs HEMT device, without the need of the equivalent circuit parameter extraction. ANNs are also used within the large-signal model of a power MESFET device, modeling the drain-source current I ds and charges Q g and Q d obtained from integration of their partial derivatives. After training and testing, the ANN models have been implemented as two-port networks into a microwave circuit simulator. This enabled the ANN models to be used in the design, analysis, and optimization of microwave/mm-wave circuits. Improved techniques in network building to provide not only accurate but also fast simulation models have been applied.