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Negative magnetoresistance in Si atomic-layer-doped GaAs

✍ Scribed by Hideo Goto; Wen Shi; Takamasa Suzuki; Nobuhiko Sawaki; Hiroshi Ito; Kunihiko Hara

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
500 KB
Volume
150
Category
Article
ISSN
0022-0248

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Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro